HIGH TEMPERATURE DEPENDENCE (300-750)k OF THE ENERGY GAP OF SEMICONDUCTORS COMPOUND CuInVi2 (S, Se, Te).

Authors

  • Chrystian Power Medina Centro de Estudios en Semiconductores. (C.E.S.). Facultad de Ciencias. Departamento de Física. Universidad de Los Andes. Núcleo La Hechicera. Mérida. Venezuela
  • Pedro Grima Gallardo ULA Centro de Estudio de Semiconductores.
  • Marcos Antonio Muñoz Pinto ULA Centro de Estudio de Semiconductores
  • Ildefonso Molina Molina ULA Centro de Estudio de Semiconductores

Abstract

Optical absorption measurements as a function of high temperature (300 to 750)K on semiconductor direct energy gap CuInVI2 (S, Se and Te) were performed in the visible light spectrum. These results are used to determine the value of the fundamental direct energy gap Eg as a function of temperature T, through classical theoretical models. The dEg/dT parameter obtained in the range of high temperature in the ternary semiconductor compounds CuInS2, CuInSe2  and CuInTe2  are -3.3x10-4eVK-1,-2.1x10-4eVK-1 and -5.3x10-4eVK-1  respectively, these results will be compared with those reported to date in lower ranges of temperatures (T <300K).

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Author Biography

Chrystian Power Medina, Centro de Estudios en Semiconductores. (C.E.S.). Facultad de Ciencias. Departamento de Física. Universidad de Los Andes. Núcleo La Hechicera. Mérida. Venezuela

MSc. en Química Aplicada PIQA ULA Doc en Química Aplicada PIQA ULA Doc en Física, Universidad Paul Sabatier Toulouse, Francia. Profesor Agregado ULA Investigador del Centro de Estudio de Semiconductores ULA

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Published

2011-03-28

How to Cite

Power Medina, C., Grima Gallardo, P., Muñoz Pinto, M. A., & Molina Molina, I. (2011). HIGH TEMPERATURE DEPENDENCE (300-750)k OF THE ENERGY GAP OF SEMICONDUCTORS COMPOUND CuInVi2 (S, Se, Te). LatinAmerican Journal of Metallurgy and Materials, 134–137. Retrieved from https://rlmm.org/ojs/index.php/rlmm/article/view/112

Issue

2011, 31(2)

Section

Regular Articles

License

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